Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor

oleh: Lin Hao, Zhentao Wang, Junyi Yang, D. Meyers, Joshua Sanchez, Gilberto Fabbris, Yongseong Choi, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, Kipton Barros, Jiun-Haw Chu, M. P. M. Dean, Cristian D. Batista, Jian Liu

Format: Article
Diterbitkan: Nature Portfolio 2019-11-01

Deskripsi

Spin-charge interactions are at the core of electronic correlation phenomena in Mott insulators. Here, the authors observe a positive anomalous magnetoresistance in a SrIrO3/SrTiO3 superlattice, indicative of strong spin-charge fluctuations in this pseudospin-half square-lattice Mott insulator.