Investigation of V1-xTixFeSb Semiconductor Solid Solution. I. Peculiarities of Electrokinetic Characteristics
oleh: V. A. Romaka, P. Rogl, Yu. V. Stadnyk, L. P. Romaka, R. O. Korzh, D. Kaczorowski, V. Ya. Krayovskyy, A. M. Нoryn
| Format: | Article |
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| Diterbitkan: | Vasyl Stefanyk Precarpathian National University 2016-03-01 |
Deskripsi
<span>The peculiarities of the temperature and concentration characteristics of resistivity and thermopower of V1-xTixFeSb semiconductor solid solution were investigated in the temperature and concentration ranges of T = 4.2 -400 K and Ті ≈ 9.5•1019–3.6•1021 см-3 (х = 0.005 - 0.20), respectively. The existence of previously unknown mechanism for the generation of structural defects with donor nature which determined the conduction of n-VFeSb and V1-xTixFeSb was established. The acceptor type of structural defects generated in V1-xTixFeSb by substitution of V atoms by Ti ones was confirmed. </span><br /><strong>Keywords:</strong><span> semiconductor, electrical conduction, electronic structure.</span>