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Nonradiative recombination leads to losses in efficiency in optoelectronic devices such as photovoltaic cells and light-emitting diodes. Charges trapped at point defects or self-trapped as a small polaron may act as recombination centers. Using various phases of titanium dioxide as an example, we provide first-principles predictions that small hole polarons in the bulk of the crystal would exhibit significant rates of recombination with electrons in the conduction band. However, small hole polarons trapped at a model grain boundary are predicted to have much higher nonradiative recombination rates, which can be attributed to softer phonon modes in the vicinity of the boundary as well as greater electron-phonon coupling. These findings have ramifications in materials other than titanium dioxide, and we propose strategies to reduce the degree of recombination that would occur at grain boundaries.