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Nickel oxide (NiO) is one of the most promising and high-performing Hole Transporting Layer (HTL) in inverted perovskite solar cells due to ideal band alignment with perovskite absorber, wide band gap, and high mobility of charges. At the same time, however, NiO does not provide good contact and trap-free junction for hole collection. In this paper, we examine this problem by developing a double hole transport configuration with a copper iodide (CuI) interlayer for efficient surface passivation. Transient photo-current (TPC) measurements showed that Perovskite/HTL interface with CuI interlayer has an improved hole injection; CuI passivation reduces the concentration of traps and the parasitic charge accumulation that limits the flow of charges. Moreover, we found that CuI protect the HTL/perovskite interface from degradation and consequently improve the stability of the cell. The presence of CuI interlayer induces an improvement of open-circuit voltage V_OC (from 1.02 V to 1.07 V), an increase of the shunt resistance R_SH (100%), a reduction of the series resistance R_S (−30%), and finally a +10% improvement of the solar cell efficiency.