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This work presents an in-situ readout of the transient photoresponse of a graphene-oxide-semiconductor heterostructure by utilizing graphene&#x2019;s field-effect coupling with the silicon photogate. The reported device which acts as a graphene charge-coupled device (GCCD) pixel is set into pre-avalanche condition by dynamic sinusoidal biasing and then exposed with pulsed illumination. The initial photo-ionized charge packet experiences pre-integration carrier multiplication, boosting the signal-to-noise ratio (SNR) before interacting with the surface traps and defects. The maximum multiplication factor of <inline-formula> <tex-math notation="LaTeX">$\mathrm {\sim }8.5$ </tex-math></inline-formula> and responsivity of <inline-formula> <tex-math notation="LaTeX">$\mathrm {350 A/W}$ </tex-math></inline-formula> are achieved. Arrhenius plots show the viability of operating the device at room temperature as thermal charge contribution is negligible. Moreover, a detailed discussion on reduced power consumption for such a sinusoidal charge-coupled device (CCD) drive concept is also incorporated. The presented technique paves the way for futuristic sinusoidally-driven graphene-silicon-based electron-multiplying CCDs with low-power surveillance and adaptive optics applications.