Importance of $\Delta V_{{\text {DIBLSS}}}/({I}_{{\text {on}}} /{I}_{{\text {off}}})$ in Evaluating the Performance of n-Channel Bulk FinFET Devices
oleh: Yi-Chuen Eng, Luke Hu, Tzu-Feng Chang, Steven Hsu, Chun Mao Chiou, Ted Wang, Chih-Wei Yang, Osbert Cheng, Chih-Yi Wang, C. S. Tseng, Ren Huang, Po-Hsieh Lin, Kuan-Yu Lu, I-Fan Chang, Chi-Ju Lee, Yen-Liang Wu, Mike Chang
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2018-01-01 |
Deskripsi
This paper aims to investigate the recently proposed figure of merit, ΔV<sub>DIBLSS</sub>/(I<sub>on</sub>/I<sub>off</sub>), in detail. Experimental results show that ΔV<sub>DIBLSS</sub>/(I<sub>on</sub>/I<sub>off</sub>) represents the index of device immunity to short-channel effects in bulk FinFETs. The value of its numerator, ΔV<sub>DIBLSS</sub>, accounts for the drain-induced barrier lowering and subthreshold swing. The value of its denominator, I<sub>on</sub>/I<sub>off</sub>, accounts for the transistor performance in transitioning between on and off states. Small ΔV<sub>DIBLSS</sub> and large I<sub>on</sub>/I<sub>off</sub> are desirable, representing the improved gate control over the channel potential. We found that both ΔV<sub>DIBL</sub> and ΔV<sub>SS</sub> values are more correlated with the drain off-state current, I<sub>off</sub>, than they are with the drain on-state current, I<sub>on</sub>. A high-performance FinFET device exhibits ΔV<sub>DIBLSS</sub> of about 100 mV and I<sub>on</sub>/I<sub>off</sub> of about 1 × 10<sup>6</sup>. Thus, ΔV<sub>DIBLSS</sub>/(I<sub>on</sub>/I<sub>off</sub>) in a high-performance FinFET device is expected to be around 1×10<sup>-4</sup> mV. Using this figure of merit, along with the verification using conventional parameters such as ΔV<sub>DIBLSS</sub> and I<sub>on</sub>/I<sub>off</sub>, the proposed device shows better electrical characteristics than that in our previous work due to the optimized process conditions implemented.