Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio
oleh: Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2020-01-01 |
Deskripsi
We successfully fabricate the Si<sub>0.8</sub>Ge<sub>0.2</sub> channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10×) on silicon-on-insulator (SOI) substrate by simple two-step dry etching. In comparison of the conventional Si FinFET, our proposed SiGe ultra-thin FinFETs (Si<sub>0.8</sub>Ge<sub>0.2</sub> UT-FinFET) at V<sub>D</sub> = 0.75 V & V<sub>G</sub> = 1.5 V shows higher ON-state current (1 mA/fin), even achieve lower OFF-state current (0.2 nA/fin) and steep subthreshold slope (SS) of 76 mV/decade, which is owing to the better gate control given by the ultra-thin fin channel. In addition, this work also exhibits the suppression of short channel effect (SCE) with very small drain induced barrier-lowering (DIBL) of 4 mV/V.