Ultralow-power switching via defect engineering in germanium telluride phase-change memory devices
oleh: Pavan Nukala, Chia-Chun Lin, Russell Composto, Ritesh Agarwal
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2016-01-01 |
Deskripsi
Phase change memories involve crystalline-to-amorphous transformations which require high current densities. Here, the authors introduce extended defects in GeTe crystals, reduce the current densities necessary for amorphization and obtain low-power, scalable memories with multiple resistance states.