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Reversible insulator–metal transition (IMT) and structure phase change in vanadium dioxide (VO₂) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO₂ materials and their IMT behaviors. Different electrical properties and lattice alignments in VO₂ (M) and VO₂ (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO₂ thin films with coexistent VO₂ (M) and VO₂ (B) phases and phase-dependent IMT behaviors. The presence of VO₂ (B) phases may induce lattice distortions in VO₂ (M). The plane spacing of (011)_M in the VO₂ (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO₂ (B) phase exists in the VO₂ (M) matrix. Significantly, the coexisting VO₂ (B) phases promote the IMT temperature of the polymorphous VO₂ thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO₂ materials and contribute to advanced electronic transistors and optoelectronic devices.