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Photoconduction Properties in Tungsten Disulfide Nanostructures
oleh: Hemanth Kumar Bangolla, Yueh-Chien Lee, Wei-Chu Shen, Rajesh Kumar Ulaganathan, Raman Sankar, He-Yun Du, Ruei-San Chen
Format: | Article |
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Diterbitkan: | MDPI AG 2023-07-01 |
Deskripsi
We reported the photoconduction properties of tungsten disulfide (WS<sub>2</sub>) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400–4000 Wm<sup>−2</sup>). The WS<sub>2</sub> photodetector exhibits superior performance with responsivity in the range of 36–73 AW<sup>−1</sup> and a normalized gain in the range of 3.5–7.3 10<sup>−6</sup> cm<sup>2</sup>V<sup>−1</sup> at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS<sub>2</sub> nanostructures are of potential as a building block for novel optoelectronic device applications.