Growth and Characterisation of Layered (BA)<sub>2</sub>CsAgBiBr<sub>7</sub> Double Perovskite Single Crystals for Application in Radiation Sensing

oleh: Valeria Murgulov, Catherine Schweinle, Michael Daub, Harald Hillebrecht, Michael Fiederle, Václav Dědič, Jan Franc

Format: Article
Diterbitkan: MDPI AG 2021-10-01

Deskripsi

A recent publication on single crystals of two-dimensional, layered organic–inorganic (BA)<sub>2</sub>CsAgBiBr<sub>7</sub> double perovskite (BA<sup>+</sup> = <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>C</mi><msub><mi>H</mi><mn>3</mn></msub><msub><mrow><mfenced><mrow><mi>C</mi><msub><mi>H</mi><mn>2</mn></msub></mrow></mfenced></mrow><mn>3</mn></msub><mi>N</mi><msubsup><mi>H</mi><mn>3</mn><mo>+</mo></msubsup></mrow></semantics></math></inline-formula>) suggested the great potential of this semiconductor material in the detection of X-ray radiation. Our powder XRD measurement confirms the crystallinity and purity of all samples that crystallise in the monoclinic space group <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>P</mi><msub><mn>2</mn><mn>1</mn></msub><mo>/</mo><mi>m</mi></mrow></semantics></math></inline-formula>, while the single crystal XRD measurements reveal the dominant {001} lattice planes. The structure–property relationship is reflected in the lower resistivity values determined from the van der Pauw measurements (1.65–9.16 × 10<sup>10</sup> Ωcm) compared to those determined from the IV measurements (4.19 × 10<sup>11</sup>–2.67 × 10<sup>12</sup> Ωcm). The density of trap states and charge-carrier mobilities, which are determined from the IV measurements, are 1.12–1.76 × 10<sup>11</sup> cm<sup>–3</sup> and 10<sup>−5</sup>–10<sup>−4</sup> cm<sup>2</sup>V<sup>–1</sup>s<sup>–1</sup>, respectively. The X-ray photoresponse measurements indicate that the (BA)<sub>2</sub>CsAgBiBr<sub>7</sub> samples synthesised in this study satisfy the requirements for radiation sensors. Further advances in crystal growth are required to reduce the density of defects and improve the performance of single crystals.