Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
oleh: Chun Wang, Yu-Chiao Chen, Heng-Tung Hsu, Yi-Fan Tsao, Yueh-Chin Lin, Chang-Fu Dee, Edward-Yi Chang
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2021-11-01 |
Deskripsi
In this work, a low-power plasma oxidation surface treatment followed by Al<sub>2</sub>O<sub>3</sub> gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. The fabricated device exhibited a threshold voltage (V<sub>th</sub>) of 0.13 V and a maximum transconductance (g<sub>m</sub>) of 484 (mS/mm). At 38 GHz, an output power density of 3.22 W/mm with a power-added efficiency (PAE) of 34.83% were achieved. Such superior performance was mainly attributed to the high-quality Al<sub>2</sub>O<sub>3</sub> layer with a smooth surface which also suppressed the current collapse phenomenon.