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This paper proposes a new structure of silicon controlled rectifier (SCR)-based ESD protection circuit using a penta-well for ESD protection in 5 V applications. The proposed circuit exhibits higher holding voltage and current-driving capability than low R_on SCR (LRSCR) ESD protection circuits. The existing LRSCR ESD protection circuit and the proposed ESD protection circuit were fabricated using the 0.18 μm BCD process. The electrical and latch-up characteristics were compared and analyzed using transmission line pulse measurement and a transient-induced latch-up test.