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We theoretically investigate the effect of a δ-potential to a temporal spin splitter for electron in a semiconductor magnetic quantum microstructure (SMQM), which is realized by patterning a perpendicularly-magnetized ferromagnetic stripe on top of InAs/AlxIn1-xAs. The dwell time for electron in the δ-doped SMQM is still spin polarized, because electron spin interacts with structural magnetic field. The spin-dependent dwell time is modulated by switching the δ-potential owing to the dependence of effective potential felt by electron on the δ-doping. These significant findings demonstrate that such a δ-doped SMQM acts as a manipulable temporal electron-spin splitter, which may be helpful for design of spintronic devices.