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It is shown that pure and 3% boron doped a-Si0.1Ge0.9:H and a-Si0.1Ge0.9:N thin films could be prepared by flash evaporation processes. The hydrogenation and nitrogenation are very successful in situ after depositing the films. The FT-IR analysis gave all the known absorbing bonds of hydrogen and nitrogen with Si and Ge. Our data showed a considerable effect of annealing temperature on the structural and optical properties of the prepared films. The optical energy gap (Eopt.) of a-Si0.1Ge0.9 samples showed to have significant increase with annealing temperature (Ta) also the refractive index and the real part of dielectric constant increases with Ta, however the extinction coefficient and imaginary part of dielectric constant decrease. The hydrogen and nitrogen alloying caused an increase in the indirect band gap(Eopt.), refractive index and extinction coefficient of a-Si0.1Ge0.9 and a-Si0.1Ge0.9:3% B. The boron doped films caused a decrease in Eopt., refractive index and real part of dielectric constant while the extinction coefficient and imaginary part of dielectric constant increased