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This paper presents a simple and clear equivalent model to investigate the SOI lateral power device using high-k dielectric (HK device). The proposed model can accurately characterize the electric field and facilitate the obtainment of optimal breakdown voltage (BV). The analytical results of the equivalent model are well matched with the simulation results from TCAD simulator, showing the validity of the proposed model. The analytical equations of vertical and lateral breakdown voltages demonstrate the breakdown mechanism of the HK device, and indicate that the BV can be effectively improved using high-k dielectric. The proposed model also expresses the optimal doping concentration of the drift region for guiding the design of the HK device. Furthermore, a limit is theoretically derived to predict the relationship between the specific on-resistance (Ron,sp) and BV of the HK device. Keywords: Model, High-k, Breakdown voltage, Specific on-resistance, Power device