The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
oleh: Y. B. Sun, Z. F. Di, T. Hu, X. M. Xie
| Format: | Article |
|---|---|
| Diterbitkan: | Hindawi Limited 2015-01-01 |
Deskripsi
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases. Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.