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In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast V_th measurement (FVM) technique. It is found that the NBTI behaviors in terms of V_th shift is strongly influenced by the measurement speed even in the nano-second scale (ns-scale). The measurement phase itself during the NBTI characterization could bring in an additional V_th shift (ΔV_th) or ΔV_th recovery. From the ns-scale characterization results in different stress and temperature, it is shown that the rapid recoverable components of NBTI should be attributable to the rapid hole trapping/detrapping, which are related to the defects with time constants of ns-scale.