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Various excitation-induced loss mechanisms have been identified during the development of direct-gap semiconductor lasers. Recently, indirect-gap laser sources, particularly germanium (Ge) or GeSn based, have emerged due to silicon industry compatibility. Tensile strain is crucial for optical gain or low-threshold room-temperature operation in such media. This study investigates an excitation-induced optical loss mechanism of mechanical origin in Ge-based micro-cavities with all-around stressor layers, a popular platform for strain-engineered laser sources. Using Raman spectroscopy, photoluminescence, and simulations, we find that excitation lowers the optical gain by altering the strain profile. Heating causes Ge micro-cavities to expand within a constraining stressor layer, inducing compressive strain, which is explained by the mismatch in thermal expansion coefficients.