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Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are recently used in many display applications due to its high mobility and high stability. However, its processing at low temperature causes defects which affect charge carrier mobility. So, it is essential to completely understand the effects of defects on charge transport mechanism. In this paper, experimental results are presented to investigate the charge carrier mobility of LTPS device. Furthermore, based on the theoretical model, the charge transport characteristic for LTPS has been interpreted. Our results show that, at low gate voltage, the charge transport of LTPS TFT displays multiple trapping and release mechanism, while free charge carrier transport mechanism at high gate voltage.