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Efficient heat dissipation to the substrate is crucial for optimal device performance in nanoelectronics. We develop a theory of electronic thermal boundary conductance (TBC) mediated by remote phonon scattering for the single-layer transition metal dichalcogenide (TMD) semiconductors MoS_{2} and WS_{2}, and model their electronic TBC with different dielectric substrates (SiO_{2}, HfO_{2}, and Al_{2}O_{3}). Our results indicate that the electronic TBC is strongly dependent on the electron density, suggesting that it can be modulated by the gate electrode in field-effect transistors, and this effect is most pronounced with Al_{2}O_{3}. Our work paves the way for the design of novel thermal devices with gate-tunable cross-plane heat-dissipative properties.