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Anomalous Hall effect (AHE) in MgO/CoFeB/X/Ta/MgO (X: Mg or Ru) multilayers by interfacial modification was reported. AHE behavior can be effectively tuned with the different insertion. For example, the anomalous Hall resistivity (ρAH) value increases by 23% with 0.4 nm Mg insertion. Whereas, the ρAH value decreases by 7.5% with 0.4 nm Ru insertion. Interfacial structural results from X-ray photoelectron spectroscopy (XPS) shows various interfacial oxygen migration can be induced by the different insertion, leading to the opposite contribution to AHE in multilayers structure. This study will provide an effective way to tune the properties of the AHE-based devices.