A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position
oleh: Kyriaki Manoli, Liviu Mihai Dumitru, Mohammad Yusuf Mulla, Maria Magliulo, Cinzia Di Franco, Maria Vittoria Santacroce, Gaetano Scamarcio, Luisa Torsi
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2014-09-01 |
Deskripsi
Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made.