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Literature confirms an improvement in the overall TE properties due to the in situ InSb nano-dispersed phases located along the grain boundaries in several double-filled InxYzCo4Sb12 skutterudites. However, the single-filled InxCo4Sb12 reports contribute enhancement in TE properties solely on the nature of In as a void filler. To qualify the effect of In on the TE properties on multiple-filled skutterudites several multiple-filled Ce0.1InxYb0.2Co4Sb12 skutterudite samples, with nominal composition Ce0.1InyYb0.2Co4Sb12 (0 ≤ y ≤ 0.2), were synthesized. A double-filled base-line sample Ce0.1Yb0.2Co4Sb12 was also synthesized and characterized to create a much fuller depiction of the nature of In and its impact on the TE properties of the filled Co4Sb12-based skutterudite materials. Our results confirm that small amounts of In can be effective at increasing electrical conductivity in the multiple-filled Ce0.1InyYb0.2Co4Sb12 skutterudite. An increased mobility and thus electrical conductivity result in a 15% increase in the dimensionless Figure of Merit, ZT, in the nominal sample composition, Ce0.1In0.05Yb0.2Co4Sb12, which exhibits a state of the art ZT > 1.4 at T = 820 K.