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The data on electrical and photoelectric characteristics of Ga₂O₃/ZnGeP₂ hetero-structures formed by RF magnetron sputtering Ga₂O₃ target with a purity of (99.99%) were obtained. The samples are sensitive to UV radiation with a wavelength of λ = 254 nm and are able to work offline as detectors of short-wave radiation. Structures with Ga₂O₃ film that was not annealed at 400 °C show weak sensitivity to long-wavelength radiation, including white light and near-IR (λ = 808 and 1064 nm). After annealing in an air environment (400 °C, 30 min), ZnGeP₂ crystals in contact with Ga₂O₃ show n-type conductivity semiconductor properties, the sensitivity of Ga₂O₃/ZnGeP₂ hetero-structures increases in the UV and IR ranges; the photovoltaic effect is preserved. Under λ = 254 nm illumination, the open-circuit voltage is fixed at positive potentials on the electrode to Ga₂O₃, the short-circuit current increases by three orders of magnitude, and the responsivity increases by an order of magnitude. The structures detect the photovoltaic effect in the near-IR range and are able to work offline (remotely) as detectors of long-wavelength radiation.