Self-Healing Anti-Atomic-Oxygen Phosphorus-Containing Polyimide Film via Molecular Level Incorporation of Nanocage Trisilanolphenyl POSS: Preparation and Characterization

oleh: Bohan Wu, Yan Zhang, Dayong Yang, Yanbin Yang, Qiang Yu, Li Che, Jingang Liu

Format: Article
Diterbitkan: MDPI AG 2019-06-01

Deskripsi

Protection of polymeric materials from the atomic oxygen erosion in low-earth orbit spacecrafts has become one of the most important research topics in aerospace science. In the current research, a series of novel organic/inorganic nanocomposite films with excellent atomic oxygen (AO) resistance are prepared from the phosphorous-containing polyimide (FPI) matrix and trisilanolphenyl polyhedral oligomeric silsesquioxane (TSP&#8722;POSS) additive. The PI matrix derived from 2,2&#8217;-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and 2,5-bis[(4-amino- phenoxy)phenyl]diphenylphosphine oxide (BADPO) itself possesses the self-healing feature in AO environment. Incorporation of TSP&#8722;POSS further enhances the AO resistance of the FPI/TSP composite films via a Si&#8722;P synergic effect. Meanwhile, the thermal stability of the pristine film is maintained. The FPI-25 composite film with a 25 wt % loading of TSP&#8722;POSS in the FPI matrix exhibits an AO erosion yield of 3.1 &#215; 10<sup>&#8722;26</sup> cm<sup>3</sup>/atom after an AO attack of 4.0 &#215; 10<sup>20</sup> atoms/cm<sup>2</sup>, which is only 5.8% and 1.0% that of pristine FPI-0 film (6FDA-BADPO) and PI-ref (PMDA-ODA) film derived from 1,2,4,5-pyromellitic anhydride (PMDA) and 4,4&#8217;-oxydianline (ODA), respectively. Inert phosphorous and silicon-containing passivation layers are observed at the surface of films during AO exposure.