Effect of oxidation on electromigration in 2-µm Cu redistribution lines capped with polyimide
oleh: I-Hsin Tseng, Po-Ning Hsu, Wei-You Hsu, Dinh-Phuc Tran, Benson Tsu-Hung Lin, Chia-Cheng Chang, K.N. Tu, Chih Chen
| Format: | Article |
|---|---|
| Diterbitkan: | Elsevier 2021-12-01 |
Deskripsi
Polyimide (PI) has been adopted to protect the Cu from oxidation in the packaging industry. Electromigration (EM) of Cu redistribution layers (RDLs) capped with PI was investigated at 160 °C under 1.0 × 106 A/cm2. The results indicated that failure of fine-pitched (2-µm) is different from that of 10-µm RDLs, which is void formation. The failure of the 2-µm RDLs is mainly caused by severe oxidation during EM. To analyze the EM failure of the Cu RDLs with different pitches, the oxidation area of nanotwinned copper (nt-Cu) and regular Cu RDLs during EM was compared. We propose an oxidation equation to estimate the resistance increase of RDLs with various widths.