Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H<sub>3</sub>PO<sub>4</sub>-Based Etchant
oleh: Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin, YewChung Sermon Wu
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2018-11-01 |
Deskripsi
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.