Thin-film lithium niobate dual-polarization IQ modulator on a silicon substrate for single-carrier 1.6 Tb/s transmission
oleh: Xuanhao Wang, Chenglin Shang, An Pan, Xingran Cheng, Tao Gui, Shuai Yuan, Chengcheng Gui, Keshuang Zheng, Peijie Zhang, Xiaolu Song, Yanbo Li, Liangchuan Li, Cheng Zeng, Jinsong Xia
| Format: | Article |
|---|---|
| Diterbitkan: | AIP Publishing LLC 2022-07-01 |
Deskripsi
We successfully demonstrate a monolithic integrated dual-polarization in-phase/quadrature (IQ) modulator based on thin-film lithium niobate platform with a silicon substrate, which consists of IQ modulators, spot-size converters, and a polarization rotator combiner. When coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.