Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

oleh: Chia-Feng Lin, Kun-Pin Huang, Han-Wei Wang, Kuei-Ting Chen, Cheng-Jie Wang, Yu-Cheng Kao, Hsiang Chen, Yung-Sen Lin

Format: Article
Diterbitkan: American Chemical Society 2024-05-01

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