High-quality NbN nanofilms on a GaN/AlN heterostructure
oleh: Diane Sam-Giao, Stéphanie Pouget, Catherine Bougerol, Eva Monroy, Alexander Grimm, Salha Jebari, Max Hofheinz, J.-M. Gérard, Val Zwiller
| Format: | Article |
|---|---|
| Diterbitkan: | AIP Publishing LLC 2014-10-01 |
Deskripsi
We demonstrate high-quality monocrystalline NbN films deposited by DC magnetron sputtering on a GaN/AlN waveguiding heterostructure. NbN layers with a thickness of 8 nm are grown along the [111] direction, and show two orientation domains with NbN(111) [2-1-1]//AlN (0001) [10-10] and NbN(111) [2-1-1]//AlN(0001) [01-10] epitaxial relationships. Our NbN films display a critical temperature of 13.2 K, with the superconducting transition taking place in a temperature range of only 0.7 K.