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Mobility overestimation due to gated contacts in organic field-effect transistors
oleh: Emily G. Bittle, James I. Basham, Thomas N. Jackson, Oana D. Jurchescu, David J. Gundlach
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2016-03-01 |
Deskripsi
Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process.