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In this study, the dominant role of the top electrode is presented for Nb₂O₅-based devices to demonstrate either the resistive switching or threshold characteristics. These Nb₂O₅-based devices may exhibit different characteristics depending on the selection of electrode. The use of the inert electrode (Au) initiates resistive switching characteristics in the Au/Nb₂O₅/Pt device. Alternatively, threshold characteristics are induced by using reactive electrodes (W and Nb). The X-ray photoelectron spectroscopy analysis confirms the presence of oxide layers of WO_y and NbO_x at interfaces for W and Nb as top electrodes. However, no interface layer between the top electrode and active layer is detected in X-ray photoelectron spectroscopy for Au as the top electrode. Moreover, the dominant phase is Nb₂O₅ for Au and NbO₂ for W and Nb. The threshold characteristics are attributed to the reduction of Nb₂O₅ phase to NbO₂ due to the interfacial oxide layer formation between the reactive top electrode and Nb₂O₅. Additionally, reliability tests for both resistive switching and threshold characteristics are also performed to confirm switching stabilities.