Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions
oleh: Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Shinobu Onoda, Takeshi Ohshima, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien Son, Jörg Wrachtrup
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2019-12-01 |
Deskripsi
The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.