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GaN and NiO/GaN electrodes were characterized by impedance spectroscopy measurements in 0.1 M NaOH. We observed the suppression of the surface states capacitance due to the modification of the chemical state of superficial Ga atoms by NiO. This result suggests that the carriers involved in the photocorrosion of GaN in alkaline conditions originate in its surface states. In addition, we characterized the epitaxial relationship between the NiO particles deposited on GaN by transmission electron microscopy, finding the NiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mo>{</mo><mrow><mn>111</mn></mrow><mo>}</mo></mrow></mrow></semantics></math></inline-formula>||GaN<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mo>{</mo><mrow><mn>0002</mn></mrow><mo>}</mo></mrow></mrow></semantics></math></inline-formula> and NiO<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mo>[</mo><mrow><mn>220</mn></mrow><mo>]</mo></mrow></mrow></semantics></math></inline-formula> ||GaN<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mrow><mo>[</mo><mrow><mn>11</mn><mover accent="true"><mn>2</mn><mo>¯</mo></mover><mn>0</mn></mrow><mo>]</mo></mrow></mrow></semantics></math></inline-formula> symmetry constraints.