Frequency upshift via flash ionization phenomena using semiconductor plasma
oleh: Nishida A., Nakata M., Oba T., Higashiguchi T., Yugami N., Sentoku Y., Kodama R.
| Format: | Article |
|---|---|
| Diterbitkan: | EDP Sciences 2013-11-01 |
Deskripsi
We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5 THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.