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DC-DC converters exist in virtually every application of modern power electronics. Due to small die size, low on-resistance, and low parasitic capacitance, GaN power devices offer superior conversion efficiency and record-setting power density. In this paper, test-to-fail methodology is adopted to investigate the intrinsic wear-out mechanisms such as would be experienced in common DC-DC converters. Devices are stressed under gate bias, drain bias, and temperature cycling individually. The lifetime of each stressor is therefore projected based on the physics-based model developed from test-to-fail and an understanding of the unique stress conditions in DC-DC converters.