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The scientific community believes that high-quality, bulk layered, semiconducting single crystals are crucial for producing two-dimensional (2D) nanosheets. This has a significant impact on current cutting-edge science in the development of next-generation electrical and optoelectronic devices. To meet this ever-increasing demand, efforts have been made to manufacture high-quality SnS₂ single crystals utilizing low-cost CVT (chemical vapor transportation) technology, which allows for large-scale crystal production. Based on the chemical reaction that occurs throughout the CVT process, a viable mechanism for SnS₂ growth is postulated in this paper. Optical, XRD with Le Bail fitting, TEM, and SEM are used to validate the quality, phase, gross structural/microstructural analyses, and morphology of SnS₂ single crystals. Furthermore, Raman, TXRF, XPS, UV–Vis, and PL spectroscopy are used to corroborate the quality of the SnS₂ single crystals, as well as the proposed energy level diagram for indirect transition in the bulk SnS₂ single crystals. As a result, the suggested method provides a cost-effective method for growing high-quality SnS₂ single crystals, which could lead to a new alternative resource for producing 2D SnS₂ nanosheets, which are in great demand for designing next-generation optoelectronic and quantum devices.