Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures
oleh: Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2023-01-01 |
Deskripsi
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation <inline-formula> <tex-math notation="LaTeX">${T}\,\,=$ </tex-math></inline-formula> 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at <inline-formula> <tex-math notation="LaTeX">${T}\,\,=$ </tex-math></inline-formula> 300 K – 125 K and 50 K – 4.5 K were observed in different types of FD-SOI p-MOSFETs with channel length <inline-formula> <tex-math notation="LaTeX">$(L_{G}) \leq100$ </tex-math></inline-formula> nm, which is possibly attributed to temperature-dependent dopant ionization induced band-to-band and trap-assisted tunneling across the drain-body junction. The phenomenon of SS linearly decreasing with temperature at <inline-formula> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> < 50 K is not observed in neither FD-SOI n-MOSFETs nor 28 nm bulk CMOSFETs.