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UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films
oleh: Tony Granz, Marius Temming, Jiushuai Xu, Qomaruddin, Cristian Fabrega, Nurhalis Majid, Gerhard Lilienkamp, Winfried Daum, Erwin Peiner, Joan Daniel Prades, Andreas Waag, Hutomo Suryo Wasisto
Format: | Article |
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Diterbitkan: | MDPI AG 2019-02-01 |
Deskripsi
UV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO<sub>2</sub> at room temperature. A significant increased sensitivity ((<i>R</i>g − <i>R</i>a)/<i>R</i>a = 65.3 ppm NO<sub>2</sub> in air) and a strong reduction in recovery time (<i>T</i>rec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed.