Investigations on Bi Doped Cu<sub>2</sub>Se Prepared by Solid State Reaction Technique for Thermoelectric Applications
oleh: Chaithanya Purushottam Bhat, Anusha, Aninamol Ani, U. Deepika Shanubhogue, P. Poornesh, Ashok Rao, Saikat Chattopadhyay
| Format: | Article |
|---|---|
| Diterbitkan: | MDPI AG 2023-03-01 |
Deskripsi
The influence of Bi doping on the structural and thermoelectric properties of Cu<sub>2</sub>Se is presented in this work. Cu<sub>2−x</sub>Bi<sub>x</sub>Se (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu<sub>2−x</sub>Bi<sub>x</sub>Se samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu<sub>2−x</sub>Bi<sub>x</sub>Se sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu<sub>2−x</sub>Bi<sub>x</sub>Se samples. At 700 K, the Cu<sub>1.988</sub>Bi<sub>0.012</sub>Se sample has the highest power factor of 1474 μWm<sup>−1</sup>K<sup>−2</sup>, showing great potential in developing high-performance Cu<sub>2</sub>Se based thermoelectric materials.