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This paper considers features of the formation and microstructure revealing of profound n- and p-type silicon monocrystals. Influence of hole and electron conductivity in semiconductors on the pattern of anodic etching is determined. Correlation among silicon microstructure, dislocation density and minority carriers’ lifetime has been studied. Influence of impurity diffusion from the surface into the space of the crystal on electrical properties’ changes of the semiconductor is shown.