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In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.