Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
oleh: Youcef A. Bioud, Abderraouf Boucherif, Maksym Myronov, Ali Soltani, Gilles Patriarche, Nadi Braidy, Mourad Jellite, Dominique Drouin, Richard Arès
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2019-09-01 |
Deskripsi
The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.