Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene
oleh: Zhaoli Gao, Sheng Wang, Joel Berry, Qicheng Zhang, Julian Gebhardt, William M. Parkin, Jose Avila, Hemian Yi, Chaoyu Chen, Sebastian Hurtado-Parra, Marija Drndić, Andrew M. Rappe, David J. Srolovitz, James M. Kikkawa, Zhengtang Luo, Maria C. Asensio, Feng Wang, A. T. Charlie Johnson
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2020-01-01 |
Deskripsi
The semiconducting ABC configuration of trilayer graphene is more challenging to grow on large scales than its semimetallic ABA counterpart. Here, an approach to trilayer growth via chemical vapor deposition is presented that utilizes substrate curvature to yield enhanced fraction and size of ABC domains.