Benchmarking monolayer MoS2 and WS2 field-effect transistors
oleh: Amritanand Sebastian, Rahul Pendurthi, Tanushree H. Choudhury, Joan M. Redwing, Saptarshi Das
| Format: | Article |
|---|---|
| Diterbitkan: | Nature Portfolio 2021-01-01 |
Deskripsi
Here, the authors perform a benchmark study of field-effect transistors (FETs) based on 2D transition metal dichalcogenides, i.e., 230 MoS2 and 160 WS2 FETs, and track device-to-device variations to gauge the technological viability in future integrated circuits.