Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
oleh: Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2018-01-01 |
Deskripsi
Ferroelectric-Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (V<sub>T</sub>-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<;60 mV/dec) is extended from ~2.5 (bulk-Si) decades to ~3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.