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Tin disulfide (SnS₂) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS₂ applications, because it can increase the functionality of SnS₂ by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS₂ crystals was explored. The chemical vapor transport method was adopted to grow pristine and Zn-doped SnS₂ crystals. Scanning electron microscopy images indicated that the grown SnS₂ crystals were layered materials. The ratio of the normalized photocurrent of the Zn-doped specimen to that of the pristine specimen increased with an increasing illumination frequency, reaching approximately five at 10⁴ Hz. Time-resolved photocurrent measurements revealed that the Zn-doped specimen had shorter rise and fall times and a higher current amplitude than the pristine specimen. The photoresponsivity of the specimens increased with an increasing bias voltage or decreasing laser power. The Zn-doped SnS₂ crystals had 7.18 and 3.44 times higher photoresponsivity, respectively, than the pristine crystals at a bias voltage of 20 V and a laser power of 4 × 10⁻⁸ W. The experimental results of this study indicate that Zn doping markedly enhances the optical response of SnS₂ layered crystals.