Auto-Split Laser Lift-Off Technique for Vertical-Injection GaN-Based Green Light-Emitting Diodes
oleh: M. Chen, B. P. Zhang, L. E. Cai, J. Y. Zhang, L. Y. Ying, X. Q. Lv
| Format: | Article |
|---|---|
| Diterbitkan: | IEEE 2013-01-01 |
Deskripsi
An auto-split laser lift-off (LLO) method for fabrication of vertical-injection GaN-based green light-emitting diodes (ASV-LEDs) is demonstrated. The ASV-LEDs exhibited a significant improvement in the light output and thermal dissipation, as compared with that of conventional LEDs on sapphire. The intrinsic physical mechanism of the auto-split LLO technique is studied by a Frank-Read dislocation clustering model. The laser energy density and mesa spacing are shown to be key factors in the auto-split LLO method. It is believed that this method offers an alternative way to fabricate high-performance GaN-based thin-film LEDs.