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In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi₂Se₃. The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi₂Se₃ were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi₂Se₃. Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi₂Se₃ is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi₂Se₃ is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.